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| Ordering number : ENN6680 2SK3278 N-Channel Silicon MOSFET 2SK3278 DC/DC Converter Applications Features * * * Package Dimensions unit : mm 2083B 6.5 5.0 4 Low ON-resistance. 4V drive. Ultrahigh-speed switching. [2SK3278] 1.5 2.3 0.5 0.85 0.7 5.5 7.0 0.8 1.6 1.2 0.6 7.5 0.5 1 2 3 1 : Gate 2 : Drain 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit : mm 2092B [2SK3278] 6.5 5.0 4 2.3 1.5 0.5 5.5 7.0 0.85 0.5 1 0.6 0.8 2 3 2.5 1.2 1.2 0 to 0.2 Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Symbol VDSS VGSS 2.3 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA Ratings 30 20 Unit V V Conditions Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N3000 TS IM TA-2613 No.6680-1/4 2SK3278 Continued from preceding page. Parameter Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol ID IDP PD Tch Tstg PW10s, duty cycle1% Tc=25C Conditions Ratings 15 45 1 15 150 --55 to +150 Unit A A W W C C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=7A ID=7A, VGS=10V ID=4A, VGS=4.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=15A VDS=10V, VGS=10V, ID=15A VDS=10V, VGS=10V, ID=15A IS=15A, VGS=0 1.0 7 10 27 40 530 170 90 9 130 40 60 10 1.5 1.0 1.0 1.2 36 56 Rathings min 30 1 10 2.4 typ max Unit V A A V S m m pF pF pF ns ns ns ns nC nC nC V Marking : K3278 Switching Time Test Circuit VDD=15V VIN 10V 0V VIN PW=10s D.C.1% ID=7A RL=2.1 D VOUT G P.G 50 2SK3278 S 10 9 8 ID -- VDS 10.0V 8.0V 10 9 8 ID -- VGS VDS=10V Drain Current, ID -- A 4.5 6.0V V 3. 5V 7 6 5 4 3 2 1 0 0 3 .0V Drain Current, ID -- A 7 6 5 4 3 2 1 0 Tc= 0 0.5 1.0 1.5 2.0 VGS=2.5V 75 --2 5C 2.5 C 25C 3.0 0.2 0.4 0.6 0.8 1.0 1.2 IT02555 3.5 4.0 Drain-to-Source Voltage, VDS -- V Gate-to-Source Voltage, VGS -- V IT02556 No.6680-2/4 2SK3278 60 RDS(on) -- VGS Tc=25C 7A ID=4A 80 RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m 55 50 45 40 35 30 25 20 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20 70 60 50 40 30 20 10 0 --60 =4 V GS =4A V, I D .5 A I =7 10V, D V GS= --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 0.1 2 3 5 7 2 3 5 IT02557 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.3 0.4 Case Temperature, Tc -- C IT02558 |yfs| -- ID IF -- VSD VGS=0 VDS=10V Forward Transfer Admittance, |yfs| -- S 75C 25C 1.0 1000 7 5 Ciss, Coss, Crss -- VDS f=1MHz Drain Current, ID -- A 10 IT02559 7 0.001 0.2 0.5 0.6 --25 0.7 0.8 Tc= C C --25 Tc= 75C 25C Forward Drain Current, IF -- A 0.9 1.0 1.1 1.2 Diode Forward Voltage, VSD -- V 12 IT02560 VGS -- Qg Gate-to-Source Voltage, VGS -- V Ciss VDS=10V ID=7A 10 Ciss, Coss, Crss -- pF 3 2 Coss Crss 8 100 7 5 3 2 6 4 2 10 0 5 10 15 20 25 30 IT02561 0 0 1 2 3 4 5 6 7 8 9 10 11 Drain-to-Source-Voltage, VDS -- V 1000 7 5 Total Gate Charge, Qg -- nC 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 IT02562 SW Time -- ID ASO IDP=45A ID=15A DC VDD=15V VGS=10V <10s Switching Time, SW Time -- ns 3 2 100s 1m s Drain Current, ID -- A 10 m 100 7 5 3 2 10 7 5 3 2 s tf td(off) td(on) tr Operation in this area is limited by RDS(on). Tc=25C Single pulse 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 5 7 100 IT02564 op er on ati 1.0 0.1 2 3 5 7 1.0 2 3 5 7 10 0.1 0.01 Drain Current, ID -- A IT02563 Drain-to-Source Voltage, VDS -- V No.6680-3/4 2SK3278 1.2 PD -- Ta Allowable Power Dissipation, PD -- W 25 PD -- Tc Allowable Power Dissipation, PD -- W 1.0 20 0.8 15 0.6 10 0.4 0.2 5 0 0 20 40 60 80 100 120 140 160 0 0 20 40 60 80 100 120 140 160 Amibient Tamperature, Ta -- C IT02565 Case Tamperature, Tc -- C IT02566 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2000. Specifications and information herein are subject to change without notice. PS No.6680-4/4 |
Price & Availability of 2SK3278
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